DocumentCode
2926641
Title
Polarization Shifting Technique in Interferometric Ellipsometer for Two-Dimensional Characterization of Silicon Wafer
Author
Chou, Chien ; Teng, Hui-Kang
Author_Institution
Inst. Radiol. Sci., Natonal Yang-Ming University, Taiwan
fYear
2005
fDate
30-02 Aug. 2005
Firstpage
1421
Lastpage
1422
Abstract
A polarization state shifting method is applied for determining the thickness of SiO2 thin film on Si substrate. The ellipsometric parameters are obtained by the image frames under different polarization modification of reflected beam.
Keywords
Biomedical measurements; Charge coupled devices; Interference; Optical interferometry; Optical polarization; Optical retarders; Semiconductor thin films; Silicon; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN
0-7803-9242-6
Type
conf
DOI
10.1109/CLEOPR.2005.1569764
Filename
1569764
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