DocumentCode :
2926641
Title :
Polarization Shifting Technique in Interferometric Ellipsometer for Two-Dimensional Characterization of Silicon Wafer
Author :
Chou, Chien ; Teng, Hui-Kang
Author_Institution :
Inst. Radiol. Sci., Natonal Yang-Ming University, Taiwan
fYear :
2005
fDate :
30-02 Aug. 2005
Firstpage :
1421
Lastpage :
1422
Abstract :
A polarization state shifting method is applied for determining the thickness of SiO2 thin film on Si substrate. The ellipsometric parameters are obtained by the image frames under different polarization modification of reflected beam.
Keywords :
Biomedical measurements; Charge coupled devices; Interference; Optical interferometry; Optical polarization; Optical retarders; Semiconductor thin films; Silicon; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
Type :
conf
DOI :
10.1109/CLEOPR.2005.1569764
Filename :
1569764
Link To Document :
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