Title :
Large-signal relaxation-time model for HEMTs and MESFETs
Author :
Foisy, M.C. ; Jeroma, P.E. ; Martin, G.H.
Author_Institution :
Boeing High Technol. Center, Seattle, WA, USA
Abstract :
A nonquasistatic charge-conserving spline-based model has been implemented in the EEsof harmonic-balance simulator. The model uses a relaxation-time approximation to describe the intrinsic charging dynamics of unipolar transistors under arbitrary excitation. By describing the variation of instantaneous charges as a relaxation toward the time-varying steady-state target set by terminal bias, nonquasistatic behavior is accurately represented. Small-signal measurements are used to calculate the steady-state charges, currents, and time constants used in the simulation. Because these parameters are represented by bivariate splines, the characteristics of diverse transistors, including HEMTs (high electron mobility transistors) and MESFETs, have been accurately modeled. On-wafer large-signal measurements of HEMTs closely match simulation results.<>
Keywords :
Schottky gate field effect transistors; high electron mobility transistors; semiconductor device models; solid-state microwave devices; splines (mathematics); EEsof; HEMTs; MESFETs; bivariate splines; harmonic-balance simulator; high electron mobility transistors; intrinsic charging dynamics; large signal model; nonquasistatic charge-conserving model; relaxation-time approximation; relaxation-time model; spline-based model; unipolar transistors; Circuit simulation; Delay; FETs; Frequency; HEMTs; MESFETs; MODFETs; Spline; Steady-state; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.187959
