Title :
12.4: Research progress of S-band broadband klystron in IECAS
Author :
Wang, Yong ; Ding, Yaogen ; Liu, Pukun ; Zhiqiang Zhang ; Zhang, Zhiqiang
Author_Institution :
Key Lab. of High Power Microwave Sources & Technol., Chinese Acad. of Sci., Beijing, China
Abstract :
From 1960s the Institute of Electronics, Chinese Academy of Sciences (IECAS) began to study the broadband klystron. Many methods to extend bandwidth of klystron have been adopted and more than ten types of broadband klystron have been developed. Recently we have successfully broken through the bandwidth of 12% in S-band on the peak power level of 800 kW. This paper introduces the state-of-art of our S-band broadband klystron.
Keywords :
klystrons; Chinese Academy of Sciences; IECAS; Institute of Electronics; S-band broadband klystron; power 800 kW; Bandwidth; Circuits; Electrons; Impedance; Klystrons; Laboratories; Microwave technology; Nuclear and plasma sciences; Radar; Solids; S-band; broadband klystron; extending bandwidth; research progress;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2010 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7098-3
DOI :
10.1109/IVELEC.2010.5503523
