DocumentCode :
2926899
Title :
InAs Quantum Dot Lasers on GaAs Substrate with 12 Layers
Author :
Shimizu, Hitoshi ; Saravanan, Shanmugam
Author_Institution :
ATR Wave Engineering Laboratories, Japan hshimizu@atr.jp
fYear :
2005
fDate :
30-02 Aug. 2005
Firstpage :
1454
Lastpage :
1455
Abstract :
Multilayered InAs quantum dot (QD) on the GaAs substrate up to 12 layers has been successfully stacked. Very low threshold current density of 740A/cm2(62A/cm2/QD-layer) has been achieved at room temperature.
Keywords :
Atomic force microscopy; Costs; Gallium arsenide; Laboratories; Laser theory; Quantum dot lasers; Quantum mechanics; Temperature; Threshold current; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
Type :
conf
DOI :
10.1109/CLEOPR.2005.1569778
Filename :
1569778
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2926899
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