12.3: Extended Interaction Klystrons for terahertz power amplifiers

Author

Chernin, David ; Burke, Alex ; Chernyavskiy, Igor ; Petillo, John ; Dobbs, Richard ; Roitman, Albert ; Horoyski, Peter ; Hyttinen, Mark ; Berry, Dave ; Blank, Monica ; Nguyen, Khanh ; Jabotinsky, Vadim ; Pershing, Dean ; Wright, Edward ; Calame, Jeffrey ;

Author_Institution

Sci. Applic. Int. Corp., McLean, VA, USA

fYear

2010

fDate

18-20 May 2010

Firstpage

217

Lastpage

218

Abstract

Extended Interaction Klystrons have been demonstrated at frequencies up to 218 GHz CW and 229 GHz pulsed. Modern design, fabrication, and measurement technologies show promise of extending their operation into the THz regime. This paper describes the challenges and some novel approaches to the development of EIKs operating at 670, 850 and 1030 GHz, while simultaneously meeting demanding requirements for output power, gain, bandwidth, and efficiency.

Keywords

klystrons; microwave power amplifiers; terahertz wave devices; bandwidth; extended interaction klystrons; frequency 1030 GHz; frequency 670 GHz; frequency 850 GHz; gain; output power; terahertz power amplifier; Bandwidth; Circuits; Electron beams; Frequency; Klystrons; Laboratories; Power amplifiers; Power generation; Power industry; Voltage; extended interaction klystron; lithography; terahertz; tolerances; vacuum electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference (IVEC), 2010 IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4244-7098-3

Type

conf

DOI

10.1109/IVELEC.2010.5503526

Filename

5503526