Title :
20 GHz high-efficiency power amplifiers using monolithic multi-cell permeable base transistors
Author :
Actis, R. ; Nichols, K.B. ; Chick, R.W. ; McMorran, R.A.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
Abstract :
The performance at 20 GHz of high-efficiency power amplifiers using a novel class of GaAs permeable base transistors (PBTs) is described. These devices utilize chip-level power-combining of multicell 8-by-20- mu m PBT active areas and have demonstrated an output power of 437 mW with a power-added efficiency of 35% in a connectorized microstrip amplifier. The power, efficiency, and gain performance of demonstration amplifiers using these devices is described.<>
Keywords :
bipolar transistors; microwave amplifiers; microwave integrated circuits; power amplifiers; power transistors; 20 GHz; 35 percent; 437 mW; GaAs; MIC; SHF; chip-level power-combining; connectorized microstrip amplifier; gain performance; high-efficiency; monolithic multicell PBT; permeable base transistors; power amplifiers; Gallium arsenide; Gratings; High power amplifiers; Microwave devices; Microwave integrated circuits; Power amplifiers; Power generation; Radiofrequency amplifiers; Scanning electron microscopy; Tungsten;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.187967
