Title :
Highly consistent FET model parameter extraction based on broadband S-parameter measurements
Author :
Kompa, G. ; Novotny, M.
Author_Institution :
Dept. of High-Frequency, Kassel Univ., Germany
Abstract :
A novel FET model parameter extraction procedure which yields highly consistent model element values of a widely used 15-element model is proposed. This procedure delivers highly consistent model element values from measured S-parameter data up to 40 GHz. It uses only one additional bias-point for the separate determination of the high-frequency value of the gate resistance R/sub g/. With R/sub g/ known, all other elements can be extracted from hot S-parameters. Especially R/sub i/ R/sub s/, and R/sub d/ are found as bias-dependent elements. The attained consistency in the extracted results makes investigation on model topology mismatch to the measured scattering parameters possible.<>
Keywords :
S-parameters; field effect transistors; semiconductor device models; solid-state microwave devices; 0 to 40 GHz; 15-element model; EHF; FET model; additional bias-point; bias-dependent elements; broadband S-parameter measurements; consistent model; gate resistance; hot S-parameters; measured S-parameter data; model topology mismatch; parameter extraction procedure; Data mining; Electrical resistance measurement; Equivalent circuits; FETs; Frequency; Mathematical model; Parameter extraction; Roentgenium; Scattering parameters; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.187970
