A balanced millimeter wave doubler based on pseudomorphic HEMTs

Author

Angelov, I. ; Zirath, H. ; Rorsman, N. ; Gronqvist, H.

Author_Institution

Chalmers Univ. of Technol., Goteborg, Sweden

fYear

1992

fDate

1-5 June 1992

Firstpage

353

Abstract

A balanced HEMT (high electron mobility transistor) doubler for operation at millimeter waves has been analyzed, fabricated, and characterized. Particular attention has been paid to the influence of the output circuit on the performance of the doubler. The doubler was analyzed with a harmonic balance method and an output power of 4 dBm at 42 GHz was obtained experimentally. The conversion gain is approximately -1 dB at 40 GHz at an input power of 5 dBm. Bias and frequency response were very close to the predicted ones.<>

Keywords

frequency multipliers; high electron mobility transistors; microwave integrated circuits; nonlinear network analysis; semiconductor device models; -1 dB; 20 GHz; 40 GHz; 42 GHz; EHF; MM-waves; balanced HEMT doubler; conversion gain; frequency doublers; frequency response; harmonic balance method; high electron mobility transistor; input power; millimeter wave doubler; millimeter waves; output circuit; output power; performance; pseudomorphic HEMTs; Frequency response; HEMTs; Harmonic analysis; MODFETs; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; PHEMTs; Power generation; Power system harmonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.187985

Filename

187985