DocumentCode :
29274
Title :
InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment
Author :
Han-Chieh Ho ; Zong-Yan Gao ; Heng-Kuang Lin ; Pei-Chin Chiu ; Yue-Ming Hsin ; Jen-Inn Chyi
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Volume :
49
Issue :
7
fYear :
2013
fDate :
March 28 2013
Firstpage :
499
Lastpage :
500
Abstract :
This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 μm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm.
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; plasma materials processing; DC performances; InGaSb-AlSb; drain current; gate-length device; hydrogen plasma treatment; p-channel HFET; size 0.2 mum; threshold voltage; voltage 0.47 V to 0 V;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2013.0430
Filename :
6504986
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=29274
بازگشت