High-quality surface passivation by corona-charged oxides for semiconductor surface characterization

Author

Schofthaler, M. ; Brendel, Rolf ; Langguth, Gernot ; Werner, Jorgen H.

Author_Institution

Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1509

Abstract

A new surface passivation method using corona-charged oxides is discussed and applied to effective lifetime measurements by microwave-detected photoconductivity decay. Three lifetime measurements are required for evaluating surface recombination velocities and semiconductor bulk lifetimes in monocrystalline silicon wafers. Surface recombination velocities lower than 1 cm/s are achieved with corona passivation

Keywords

carrier lifetime; corona; electron-hole recombination; elemental semiconductors; passivation; photoconductivity; silicon; surface recombination; Si; bulk lifetimes; corona-charged oxides; high-quality surface passivation; lifetime measurements; microwave-detected photoconductivity decay; monocrystalline silicon wafers; semiconductor surface characterization; solar cell material; surface recombination velocities; Carbon capture and storage; Charge carrier density; Charge carrier lifetime; Corona; Microwave measurements; Microwave theory and techniques; Optical reflection; Passivation; Radiative recombination; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520237

Filename

520237