Title :
High-quality surface passivation by corona-charged oxides for semiconductor surface characterization
Author :
Schofthaler, M. ; Brendel, Rolf ; Langguth, Gernot ; Werner, Jorgen H.
Author_Institution :
Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany
Abstract :
A new surface passivation method using corona-charged oxides is discussed and applied to effective lifetime measurements by microwave-detected photoconductivity decay. Three lifetime measurements are required for evaluating surface recombination velocities and semiconductor bulk lifetimes in monocrystalline silicon wafers. Surface recombination velocities lower than 1 cm/s are achieved with corona passivation
Keywords :
carrier lifetime; corona; electron-hole recombination; elemental semiconductors; passivation; photoconductivity; silicon; surface recombination; Si; bulk lifetimes; corona-charged oxides; high-quality surface passivation; lifetime measurements; microwave-detected photoconductivity decay; monocrystalline silicon wafers; semiconductor surface characterization; solar cell material; surface recombination velocities; Carbon capture and storage; Charge carrier density; Charge carrier lifetime; Corona; Microwave measurements; Microwave theory and techniques; Optical reflection; Passivation; Radiative recombination; Silicon;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520237
