Two-phonon processes in II-VI semiconductors investigated with terahertz time-domain spectroscopy

Author

Schall, M. ; Walther, M. ; Helm, H. ; Jepsen, P.U.

Author_Institution

Dept. of Molecular & Opt. Phys., Freiburg Univ., Germany

fYear

2000

fDate

7-12 May 2000

Firstpage

465

Lastpage

466

Abstract

Summary form only given. Terahertz time-domain spectroscopy (THz-TDS) is meanwhile a well proved technique to determine the complex dielectric function of materials in the far-infrared (FIR) regime of the electromagnetic spectrum. Especially in accurate measurements of the optical properties of crystals at frequencies below the transverse optical phonon (TO) resonance, THz-TDS is a powerful alternative to classical methods like Raman and FTIR spectroscopy. We investigate the temperature-dependent FIR properties of the II-VI semiconductor compounds ZnTe and CdTe in the frequency range between 200 GHz and 2.3 THz.

Keywords

II-VI semiconductors; absorption coefficients; cadmium compounds; dielectric function; infrared spectra; millimetre wave spectra; phonon-phonon interactions; time-domain analysis; zinc compounds; 200 GHz to 2.3 THz; CdTe; II-VI semiconductors; ZnTe; absorption coefficients; classical methods; complex dielectric function; electromagnetic spectrum; far-infrared regime; frequency range; optical properties; temperature-dependent FIR properties; terahertz time-domain spectroscopy; transverse optical phonon resonance; two-phonon processes; Crystalline materials; Dielectric materials; Dielectric measurements; Electrochemical impedance spectroscopy; Electromagnetic spectrum; Finite impulse response filter; Frequency; II-VI semiconductor materials; Optical materials; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.907259

Filename

907259