Title :
Intrinsic origin of electric dipoles formed at high-k/SiO2 interface
Author :
Kita, Koji ; Toriumi, Akira
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo
Abstract :
A new model to understand the origin of the dipole formed at high-k/SiO2 interface is presented. In our model, the areal density difference of oxygen atoms at high-k/SiO2 interface is considered as the cause of the dipole. On the basis of our model it is possible to predict the dipole direction and its magnitude for the candidate gate dielectrics, including ones so far not experimentally reported. The validity of the model was experimentally supported by VFB shifts of MOS capacitors, and core-level shifts in XPS measurements.
Keywords :
CMOS integrated circuits; MOS capacitors; X-ray photoelectron spectra; core levels; electric moments; high-k dielectric thin films; silicon compounds; MOS capacitors; SiO2; XPS measurements; core-level shifts; dipole direction; electric dipoles; gate dielectrics; high-k/SiO2 Interface; Channel bank filters; Dielectric measurements; Electronic mail; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS capacitors; Predictive models; Semiconductor device modeling; Voltage control;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796605
