Intrinsic origin of electric dipoles formed at high-k/SiO2 interface

Author

Kita, Koji ; Toriumi, Akira

Author_Institution

Dept. of Mater. Eng., Univ. of Tokyo, Tokyo

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

A new model to understand the origin of the dipole formed at high-k/SiO₂ interface is presented. In our model, the areal density difference of oxygen atoms at high-k/SiO₂ interface is considered as the cause of the dipole. On the basis of our model it is possible to predict the dipole direction and its magnitude for the candidate gate dielectrics, including ones so far not experimentally reported. The validity of the model was experimentally supported by V_FB shifts of MOS capacitors, and core-level shifts in XPS measurements.

Keywords

CMOS integrated circuits; MOS capacitors; X-ray photoelectron spectra; core levels; electric moments; high-k dielectric thin films; silicon compounds; MOS capacitors; SiO₂; XPS measurements; core-level shifts; dipole direction; electric dipoles; gate dielectrics; high-k/SiO₂ Interface; Channel bank filters; Dielectric measurements; Electronic mail; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS capacitors; Predictive models; Semiconductor device modeling; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796605

Filename

4796605