Systematic Study of Vth controllability using ALD-Y2O3, La2O3, and MgO2 layers with HfSiON/metal gate first n-MOSFETs for hp 32 nm bulk devices

We present a systematic examination of V_th controllability using Y₂O₃, La₂O₃, and MgO₂ layers by atomic-layer-deposition (ALD) technology with HfSiON/TaSiN gate first stacks for half-pitch (hp) 32 nm-node metal gated bulk devices. By employing base-Y₂O₃ layers of 1 mono-layer (ML< 0.5 nm), ultra-thin equivalent-oxide-thickness (EOT: 0.72 nm) can be achieved with excellent V_th controllability (|DeltaV_th|> 130 mV), high electron carrier mobility, and very high drain current (> 1100 muA/mum) at a low I_off value (100 nA/mum). Moreover, the positive-bias-temperature-instability (PBTI) over a 10-year lifetimes can be readily achieved with V_g= +1.0 V at 125degC.