DocumentCode
2927770
Title
Session 3: CMOS devices and technology — advanced transport enhancement
fYear
2008
fDate
15-17 Dec. 2008
Firstpage
1
Lastpage
1
Abstract
This session focuses on various transport enhancement for nMOS and pMOS devices. The papers will cover performance elements in combination with various advanced transistor elements like High-K metal gate and alternate crystal orientation. Among the highlights of this sessions, a recordhigh pFET performance with High-K metal gate and (110) surface channel and nMOS devices with embedded Si:C, exhibiting mobility boost as high as 25%.
Keywords
CMOS technology; High K dielectric materials; High-K gate dielectrics; Laboratories; MOS devices; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
8164-2284
Print_ISBN
978-1-4244-2377-4
Electronic_ISBN
8164-2284
Type
conf
DOI
10.1109/IEDM.2008.4796610
Filename
4796610
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