Title :
Session 3: CMOS devices and technology — advanced transport enhancement
Abstract :
This session focuses on various transport enhancement for nMOS and pMOS devices. The papers will cover performance elements in combination with various advanced transistor elements like High-K metal gate and alternate crystal orientation. Among the highlights of this sessions, a recordhigh pFET performance with High-K metal gate and (110) surface channel and nMOS devices with embedded Si:C, exhibiting mobility boost as high as 25%.
Keywords :
CMOS technology; High K dielectric materials; High-K gate dielectrics; Laboratories; MOS devices; Transistors;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796610
