Title :
(110) NMOSFETs competitive to (001) NMOSFETs: Si migration to create (331) facet and ultra-shallow Al implantation after NiSi formation
Author :
Fukutome, H. ; Okabe, K. ; Okubo, K. ; Minakata, H. ; Morisaki, Y. ; Ikeda, K. ; Yamamoto, T. ; Hosaka, K. ; Momiyama, Y. ; Kase, M. ; Satoh, S.
Author_Institution :
Fujitsu Labs. Ltd., Akiruno
Abstract :
We demonstrated for the first time the device performance of (110) nMOSFETs featuring a Si migration process, resulting in better mobility and modified shape of the narrow active region, and ultra-shallow Al implantation after nickel silicide (NiSi) formation, resulting in reduced parasitic resistance. We found that these processes made the performance of (110) nMOSFETs competitive with that of (001) nMOSFETs while maintaining their 40% advantage in pMOSFET performance.
Keywords :
MOSFET; aluminium; electrical resistivity; elemental semiconductors; ion implantation; nickel compounds; silicon; NiSi:Al; Si; migration; mobility; nMOSFETs; pMOSFET; parasitic resistance; ultra-shallow implantation; Capacitive sensors; Degradation; Electric resistance; Electric variables; Electron mobility; MOSFET circuits; Rough surfaces; Silicides; Surface resistance; Surface roughness;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796613
