Title :
Experimental investigation on the origin of direction dependence of Si (110) hole mobility utilizing ultra-thin body pMOSFETs
Author :
Shimizu, Ken ; Saraya, Takuya ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo
Abstract :
The direction dependence of hole mobility in (110) SOI pFETs has been systematically investigated for the first time utilizing a new device structure. It is newly found that the high hole mobility in Si (110)/<110> even at high electric field originates from not only the large subband energy difference but also lighter conductivity mass than Si (110)/<100> caused by quantum confinement.
Keywords :
MOSFET; hole mobility; silicon; silicon-on-insulator; SOI pFET; Si; conductivity mass; direction dependence; high hole mobility; hole mobility; quantum confinement; ultrathin body pMOSFET; Capacitance-voltage characteristics; Conductivity; FETs; Fabrication; FinFETs; Light scattering; MOSFETs; Particle scattering; Potential well; Voltage control;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796615
