Title :
High performance oxide thin film transistors with double active layers
Author :
Kim, Sun Il ; Kim, Chang Jung ; Park, Jae Chul ; Song, Ihun ; Kim, Sang Wook ; Yin, Huaxiang ; Lee, Eunha ; Lee, Jae Chul ; Park, Youngsoo
Author_Institution :
Semicond. Lab., Yongin
Abstract :
We successfully integrated the high performance oxide thin film transistors with double active layers. The active layer is composed of IZO (or ITO) and GIZO layers. The TFT with ITO/GIZO double active layer shows a high mobility of 104 cm2/V.sec, the acceptable threshold voltage of about 0.5 V and the low Vth shift less than 1 V under voltage stress. These are very promising results for applications in driving large area AMOLED and AMLCD display.
Keywords :
gallium compounds; indium compounds; semiconductor materials; thin film transistors; AMLCD display; AMOLED display; ITO layers; ITO-GIZO layers; ITO-GaInZnO; IZO layers; IZO-GIZO layers; InZnO-GaInZnO; double active layers; mobility; oxide thin film transistors; threshold voltage; Dry etching; Flat panel displays; Indium tin oxide; Plasma applications; Plasma chemistry; Plasma temperature; Stability; Stress; Thin film transistors; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796617
