Title :
A 0.8-watt Ka-band power amplifier
Author :
Schellenberg, J.M. ; Tan, K.L. ; Chan, R.W. ; Chen, C.H. ; Lin, T.S. ; Streit, D.C. ; Liu, P.H.
Author_Institution :
Schellenberg Associates, Huntington Beach, CA, USA
Abstract :
A hybrid, 2-stage, high electron mobility transistor (HEMT) power amplifier is reported operating over the 32-35-GHz band with a minimum output power of 28 dBm. At 34 GHz, an output power of 0.8 W with an associated power-added efficiency of 26.6% has been demonstrated. Biased for efficiency, this amplifier has demonstrated a power-added efficiency of 32.2% with an output power of over 0.7 W.<>
Keywords :
high electron mobility transistors; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; power amplifiers; 0.8 W; 26.6 percent; 32 to 35 GHz; 32.2 percent; EMF; HEMT; Ka-band; MM-wave type; high electron mobility transistor; hybrid MIC; millimetre-wave operation; power amplifier; two-stage type; Density measurement; Frequency; HEMTs; Heterojunctions; High power amplifiers; Impedance; Indium gallium arsenide; Power amplifiers; Power generation; Power transmission lines;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188034
