DocumentCode
2928209
Title
A thorough investigation of dynamic bias on linear GaAs FET power amplifier performance
Author
Miers, T.H. ; Hirsch, V.A.
Author_Institution
Ball Commun. Syst. Div., Broomfield, CO, USA
fYear
1992
fDate
1-5 June 1992
Firstpage
537
Abstract
The authors present the results of a thorough study on the effects of dynamic gate bias on GaAs power FET performance. Detailed information concerning the effects of gate bias changes on gain, input return loss, and linearity are included. A two-stage linear power amplifier was built and tested that successfully demonstrated dynamic gate bias optimization. This amplifier produced over 5 W of output power at the L-band with high efficiency and excellent linearity.<>
Keywords
III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave amplifiers; power amplifiers; solid-state microwave circuits; ultra-high-frequency amplifiers; 5 W; FET power amplifier; GaAs; L-band; bias optimization; dynamic bias; gain; gate bias changes; input return loss; linear amplifier performance; linearity; power FET; Energy consumption; FETs; Gallium arsenide; L-band; Linearity; Performance loss; Power amplifiers; Power generation; System testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location
Albuquerque, NM, USA
ISSN
0149-645X
Print_ISBN
0-7803-0611-2
Type
conf
DOI
10.1109/MWSYM.1992.188036
Filename
188036
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