Title :
High voltage devices integration into advanced CMOS technologies
Author :
Bianchi, R.A. ; Monsieur, F. ; Blanchet, F. ; Raynaud, C. ; Noblanc, O.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
This paper focuses on CMOS technologies for mobile applications having integrated high voltage devices to address analog baseband and RF power applications. Technology evolution from BCD-like to advanced CMOS technologies on bulk and thin SOI substrates and some selected device architectures (extended drain MOSFET, drift MOSFET, lateral and vertical diffused MOSFET) are reviewed. Main challenges encountered when integrating these devices in advanced CMOS are explained. The influence of the gate oxide thickness on the relevant figures of merit and some considerations on performance-reliability trade-off are provided.
Keywords :
CMOS integrated circuits; high-voltage techniques; mobile handsets; power MOSFET; power amplifiers; radiofrequency amplifiers; silicon-on-insulator; CMOS technology; RF amplifier; RF power application; Si-SiO2; analog baseband application; bulk SOI substrate; gate oxide thickness; high voltage device integration; integrated high voltage device; mobile handset application; thin SOI substrate; Baseband; Batteries; CMOS process; CMOS technology; Costs; Energy management; Light emitting diodes; MOSFET circuits; Radio frequency; Voltage;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796634
