Title :
On-wafer characterization, modelling, and optimization of InP-based HEMTs, PIN-photodiodes and monolithic receiver-OEICs for fiber-optic communication
Author :
Kaiser, D. ; Grosskopf, H. ; Gyuro, I. ; Koerner, U. ; Kuebart, W. ; Reemtsma, J.-H. ; Eisele, H.
Author_Institution :
Alcatel-SEL, Stuttgart, Germany
Abstract :
The authors present results achieved with receiver OEICs (optoelectronic integrated circuits) consisting of InGaAs PIN-photodiodes and InAlAs/InGaAs HEMTs (high electron mobility transistors) grown by low-pressure MOVPE (metalorganic vapor phase epitaxy) on semi-insulating InP substrates. Both devices were realized on the same wafer. A 3-dB bandwidth of 1.6 GHz and an open eye at 3.0 Gb/s NRZ modulation of the monolithically integrated photoreceiver were obtained by on-wafer characterization.<>
Keywords :
III-V semiconductors; S-parameters; high electron mobility transistors; indium compounds; integrated circuit testing; integrated optoelectronics; molecular beam epitaxial growth; optical receivers; p-i-n photodiodes; 1.6 GHz; 3 Gbit/s; InAlAs-InGaAs-InP; InP substrates; NRZ modulation; PIN-photodiodes; fiber-optic communication; high electron mobility transistors; low-pressure MOVPE; metalorganic vapor phase epitaxy; modelling; monolithically integrated photoreceiver; on-wafer characterization; optimization; optoelectronic integrated circuits; receiver OEICs; semiinsulating substrates; Epitaxial growth; Epitaxial layers; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Semiconductor device modeling; Semiconductor process modeling; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188044
