Title :
Source injection induced off-state breakdown and its improvement by enhanced back barrier with fluorine ion implantation in AlGaN/GaN HEMTs
Author :
Wang, Maojun ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
The mechanisms of AlGaN/GaN HEMT´s off-state breakdown are investigated. Both the source- and gate-injection induced impact ionizations are identified with the former leading to premature three-terminal breakdown. A 35% improvement of the breakdown voltage could be achieved in an enhanced back barrier HEMT by implanting fluorine ions under the channel region and effectively block the source injection through the buffer layer.
Keywords :
III-V semiconductors; aluminium compounds; fluorine; gallium compounds; high electron mobility transistors; ion implantation; semiconductor device breakdown; wide band gap semiconductors; AlGaN-GaN:F; enhanced back barrier; fluorine ion implantation; impact ionizations; premature three-terminal breakdown; source injection induced off-state breakdown; Aluminum gallium nitride; Buffer layers; Doping; Electric breakdown; Gallium nitride; HEMTs; Impact ionization; Ion implantation; MODFETs; Temperature measurement;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796637
