Source injection induced off-state breakdown and its improvement by enhanced back barrier with fluorine ion implantation in AlGaN/GaN HEMTs

Author

Wang, Maojun ; Chen, Kevin J.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

The mechanisms of AlGaN/GaN HEMT´s off-state breakdown are investigated. Both the source- and gate-injection induced impact ionizations are identified with the former leading to premature three-terminal breakdown. A 35% improvement of the breakdown voltage could be achieved in an enhanced back barrier HEMT by implanting fluorine ions under the channel region and effectively block the source injection through the buffer layer.

Keywords

III-V semiconductors; aluminium compounds; fluorine; gallium compounds; high electron mobility transistors; ion implantation; semiconductor device breakdown; wide band gap semiconductors; AlGaN-GaN:F; enhanced back barrier; fluorine ion implantation; impact ionizations; premature three-terminal breakdown; source injection induced off-state breakdown; Aluminum gallium nitride; Buffer layers; Doping; Electric breakdown; Gallium nitride; HEMTs; Impact ionization; Ion implantation; MODFETs; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796637

Filename

4796637