Realization of vertical GaAs/InAs nanowire heterostructures on Si substrate

Author

Yan, Xin ; Zhang, Xia ; Ren, Xiaomin ; Huang, Hui ; Guo, Jingwei ; Guo, Xin ; Wang, Qi ; Yongqing Huang

Author_Institution

State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China

fYear

2011

fDate

21-23 Oct. 2011

Firstpage

1

Lastpage

3

Abstract

GaAs/InAs nanowire heterostructures are grown on Si(111) substrate by metal organic chemical vapor deposition via Au-catalyst vapor-liquid-solid mechanism. Nanowires vertical to the substrate are realized by using GaAs/AlGaAs buffer layers. Straight InAs wire is grown axially on the GaAs nanowire by inserting a composition-graded In_xGa_1-xAs buffer segment between the two lattice mismatched materials. This work helps open new possibilities for the integration of III-V nanowire heterostructures on Si.

Keywords

III-V semiconductors; MOCVD; buffer layers; gallium arsenide; indium compounds; nanofabrication; nanowires; semiconductor growth; semiconductor heterojunctions; GaAs-InAs-Si; Si; buffer layers; gold-catalyst vapor-liquid-solid mechanism; lattice mismatched materials; metal organic chemical vapor deposition; nanowire heterostructures; silicon substrate; Educational institutions; Gallium arsenide; Gold; Image segmentation; Lattices; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Photonics and Optical Communications (IPOC), 2011 International Conference on

Conference_Location

Jurong West

Print_ISBN

978-1-4673-0713-0

Electronic_ISBN

978-1-4673-0711-6

Type

conf

DOI

10.1109/IPOC.2011.6122865

Filename

6122865