Title :
Ka-band high efficiency 1 watt power amplifier
Author :
Dow, G.S. ; Tan, K. ; Ton, N. ; Abell, J. ; Siddiqui, M. ; Gorospe, B. ; Streit, D. ; Liu, P. ; Sholley, M.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
The authors describe the design and performance of a miniaturized 35-GHz power amplifier. The two-stage amplifier has achieved an output power of 1 W with an associated gain of 10 dB and a power-added efficiency of 25.1%. The design is based on a TRW 0.25- mu m T-gate pseudomorphic InGaAs high electron mobility transistor (HEMT) device technology. The amplifier was designed using a 1-mm device driving a 2-mm device. The complete amplifier mounted on a carrier is 0.26 in*0.16 in*0.02 in. The amplifier results reported here represent the best power gain and efficiency performances achieved from a single amplifier at 35 GHz.<>
Keywords :
high electron mobility transistors; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; power amplifiers; 0.25 micron; 1 W; 10 dB; 25.1 percent; 35 GHz; EHF; HEMT; InGaAs; Ka-band; MIC; MM-wave type; T-gate; high electron mobility transistor; power amplifier; two-stage amplifier; Current measurement; Density measurement; HEMTs; High power amplifiers; Indium gallium arsenide; Millimeter wave technology; Performance gain; Power amplifiers; Power generation; Space technology;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188048
