Millimeter-wave monolithic gain block amplifiers using pseudomorphic HEMT

Author

Yoshinaga, Hiroyuki ; Abe, Bunichiro ; Shibata, Kiyoyasu ; Kawasaki, Hisao ; Ohtomo, Motoharu ; Tokaji, Isao

fYear

1992

fDate

1-5 June 1992

Firstpage

583

Abstract

Monolithic gain blocks for millimeter-wave amplifiers have been developed using 0.1- mu m gate planar-doped pseudomorphic high electron mobility transistors (HEMTs) and successfully applied to U- and W-band single-stage amplifiers. The gain block consists of the HEMT and input/output matching circuits integrated in a single chip. The U-band amplifier exhibited a gain of 5.0+or-0.7 dB and a noise figure of less than 2.8 dB over 45-55 GHz. The W-band amplifier showed a gain of 3.1+or-0.3 dB and a noise figure of 4.5+or-0.5 dB over 94-98 GHz.<>

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; 0.1 micron; 2.8 dB; 3.1 dB; 4.5 dB; 45 to 55 GHz; 5 dB; 94 to 98 GHz; MM-wave device; U-band; W-band; high electron mobility transistors; input/output matching circuits; millimeter-wave amplifiers; monolithic gain block; planar doped device; pseudomorphic HEMT; single-stage amplifiers; Gain; HEMTs; Impedance matching; Millimeter wave integrated circuits; Millimeter wave transistors; Noise figure; PHEMTs; Radiofrequency amplifiers; Scattering parameters; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188049

Filename

188049