DocumentCode
2928436
Title
6.2: Optimizing osmium-ruthenium films to inhibit tungsten interdiffusion
Author
Swartzentruber, Phillip D. ; Wen-Chung Li ; Balk, Thomas J. ; Roberts, Scott
Author_Institution
Dept. of Chem. & Mater. Eng., Univ. of Kentucky, Lexington, KY, USA
fYear
2010
fDate
18-20 May 2010
Firstpage
73
Lastpage
74
Abstract
Osmium-ruthenium thin films were deposited on porous tungsten pellets, at the same time as cathode assemblies, to investigate possibilities for minimizing interdiffusion. Previous studies had identified promising film characteristics for inhibiting tungsten interdiffusion. For example, it was found that a 5W-substrate-biased film of 550 nm thickness exhibited high structural and compositional stability, and several other films exhibited promising properties as well. These films were produced and annealed, then analyzed for composition. Emission tests of M-type cathode assemblies, coated with the same candidate films, were performed to assess the degree of lifetime improvement imparted by the films to the cathodes.
Keywords
cathodes; chemical interdiffusion; electron emission; osmium; ruthenium; thin films; tungsten; M-type cathode assembly; compositional stability; emission test; film characteristics; osmium-ruthenium thin films; porous tungsten pellet; structural stability; tungsten interdiffusion; Assembly; Barium; Cathodes; Coatings; Degradation; Microstructure; Stability; Temperature; Transistors; Tungsten; M-coating; M-type; dispenser cathode; interdiffusion; microstructure; osmium; ruthenium; thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference (IVEC), 2010 IEEE International
Conference_Location
Monterey, CA
Print_ISBN
978-1-4244-7098-3
Type
conf
DOI
10.1109/IVELEC.2010.5503598
Filename
5503598
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