• DocumentCode
    2928436
  • Title

    6.2: Optimizing osmium-ruthenium films to inhibit tungsten interdiffusion

  • Author

    Swartzentruber, Phillip D. ; Wen-Chung Li ; Balk, Thomas J. ; Roberts, Scott

  • Author_Institution
    Dept. of Chem. & Mater. Eng., Univ. of Kentucky, Lexington, KY, USA
  • fYear
    2010
  • fDate
    18-20 May 2010
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    Osmium-ruthenium thin films were deposited on porous tungsten pellets, at the same time as cathode assemblies, to investigate possibilities for minimizing interdiffusion. Previous studies had identified promising film characteristics for inhibiting tungsten interdiffusion. For example, it was found that a 5W-substrate-biased film of 550 nm thickness exhibited high structural and compositional stability, and several other films exhibited promising properties as well. These films were produced and annealed, then analyzed for composition. Emission tests of M-type cathode assemblies, coated with the same candidate films, were performed to assess the degree of lifetime improvement imparted by the films to the cathodes.
  • Keywords
    cathodes; chemical interdiffusion; electron emission; osmium; ruthenium; thin films; tungsten; M-type cathode assembly; compositional stability; emission test; film characteristics; osmium-ruthenium thin films; porous tungsten pellet; structural stability; tungsten interdiffusion; Assembly; Barium; Cathodes; Coatings; Degradation; Microstructure; Stability; Temperature; Transistors; Tungsten; M-coating; M-type; dispenser cathode; interdiffusion; microstructure; osmium; ruthenium; thin film;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electronics Conference (IVEC), 2010 IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4244-7098-3
  • Type

    conf

  • DOI
    10.1109/IVELEC.2010.5503598
  • Filename
    5503598