DocumentCode
2928437
Title
60 GHz power amplifier using PHEMT
Author
Goel, J. ; Tan, K.L. ; Stones, D.I. ; Chan, R.W. ; Streit, D.C. ; Peratoner, S. ; Schellenberg, J.
Author_Institution
TRW, Redondo Beach, CA, USA
fYear
1992
fDate
1-5 June 1992
Firstpage
587
Abstract
A millimeter wave power amplifier has been developed using a 0.15- mu m, T-gate pseudomorphic high electron mobility transistor (HEMT). It utilized a novel low-loss planar combiner. The performance obtained was 715-mW output power with more than 13-dB linear gain at 60 GHz, the highest results reported in the literature to date. These state-of-the-art results were attributed to the excellent device and combiner performance. The basic components as well as details of the power module are outlined.<>
Keywords
high electron mobility transistors; microwave amplifiers; microwave integrated circuits; power amplifiers; 0.15 micron; 13 dB; 60 GHz; 715 mW; EHF; MIC; T-gate; high electron mobility transistor; low-loss planar combiner; millimeter wave power amplifier; power module; pseudomorphic HEMT; Electron mobility; HEMTs; High power amplifiers; MODFETs; Millimeter wave transistors; Multichip modules; PHEMTs; Performance gain; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location
Albuquerque, NM, USA
ISSN
0149-645X
Print_ISBN
0-7803-0611-2
Type
conf
DOI
10.1109/MWSYM.1992.188050
Filename
188050
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