Title :
Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages
Author :
Padilla, Alvaro ; Yeung, Chun Wing ; Shin, Changhwan ; Hu, Chenming ; Liu, Tsu-Jae King
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Univ. of California, Berkeley, CA
Abstract :
A novel transistor design which utilizes positive feedback to achieve steep switching behavior is proposed and demonstrated. The feedback (FB) FET exhibits very low subthreshold swing (~2 mV/dec) and high ION/IOFF ratio (~108) to allow for significant reductions in gate voltage swing (to below 0.5V). It is a new candidate to replace the MOSFET for future low-power electronic devices.
Keywords :
field effect transistors; low-power electronics; feedback FET; gate voltage swing; low-power electronic devices; positive feedback; subthreshold swing; transistor exhibiting steep switching behavior; Charge carrier processes; Diodes; FETs; Feedback; Low voltage; MOSFET circuits; Power MOSFET; Temperature; Threshold voltage; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796643
