• DocumentCode
    2928493
  • Title

    Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

  • Author

    Padilla, Alvaro ; Yeung, Chun Wing ; Shin, Changhwan ; Hu, Chenming ; Liu, Tsu-Jae King

  • Author_Institution
    Electr. Eng. & Comput. Sci. Dept., Univ. of California, Berkeley, CA
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel transistor design which utilizes positive feedback to achieve steep switching behavior is proposed and demonstrated. The feedback (FB) FET exhibits very low subthreshold swing (~2 mV/dec) and high ION/IOFF ratio (~108) to allow for significant reductions in gate voltage swing (to below 0.5V). It is a new candidate to replace the MOSFET for future low-power electronic devices.
  • Keywords
    field effect transistors; low-power electronics; feedback FET; gate voltage swing; low-power electronic devices; positive feedback; subthreshold swing; transistor exhibiting steep switching behavior; Charge carrier processes; Diodes; FETs; Feedback; Low voltage; MOSFET circuits; Power MOSFET; Temperature; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796643
  • Filename
    4796643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2928493