DocumentCode :
2928516
Title :
A millimeterwave subharmonically pumped resistive mixer based on a heterostructure field effect transistor technology
Author :
Zirath, H. ; Angelov, I. ; Rorsman, N.
Author_Institution :
Chalmers Univ. of Technol., Goteborg, Sweden
fYear :
1992
fDate :
1-5 June 1992
Firstpage :
599
Abstract :
A subharmonically pumped resistive mixer (SPRM) working at millimeter waves based on a heterostructure FET (HFET) technology is described. Nonlinear simulations of the mixer were performed and a special dual HFET chip was developed and fabricated for the demonstration of this mixer. Mixer circuits were fabricated and operational characteristics at 40-45 GHz were investigated.<>
Keywords :
equivalent circuits; high electron mobility transistors; mixers (circuits); solid-state microwave circuits; 40 to 45 GHz; EHF; dual HFET chip; field effect transistor; heterostructure FET; millimeter waves; nonlinear simulation; resistive mixer; subharmonically pumped; Circuit simulation; Diodes; Frequency estimation; Gallium arsenide; HEMTs; Local oscillators; Low voltage; MODFETs; Molecular beam epitaxial growth; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-0611-2
Type :
conf
DOI :
10.1109/MWSYM.1992.188053
Filename :
188053
Link To Document :
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