Shot noise in quasi one-dimensional FETs

We propose a novel and general method to investigate shot noise in nanoscale devices by means of Monte Carlo simulations within the self-consistent 3D Poisson-NEGF framework, focusing our attention on Carbon Nanotube and Silicon Nanowire Field effect transistors. We will show that Pauli exclusion principle and Coulomb interactions play an important role in device electrical behavior. In particular, their combined effect leads to a reduction of shot noise in strong inversion down to 23% of the full shot power spectral density for a gate overdrive of 0.4 V.