Title :
Modeling of schottky and ohmic contacts between metal and graphene nanoribbons using extended hückel theory (EHT)-based NEGF method
Author :
Guan, Ximeng ; Ran, Qiushi ; Zhang, Ming ; Yu, Zhiping ; Wong, H. S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
Abstract :
The extended huckel theory (EHT)-based NEGF method is applied to perform atomistic quantum transport simulation of Schottky and ohmic metal-GNR contacts with different metal electrodes. Effects induced by changing the GNR orientation or the number of graphene layers are discussed. The interface dipole due to the polarization of chemical bond is found to have a significant impact on the contact behavior.
Keywords :
EHT calculations; Schottky barriers; graphene; C; GNR orientation; Schottky-ohmic contacts; chemical bonds; extended Huckel theory; interface dipole; metal-graphene nanoribbons; quantum transport simulation; Atomic layer deposition; Atomic measurements; Bonding; Chemicals; Electrodes; Electrons; Hydrogen; Ohmic contacts; Polarization; Surface-mount technology;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796650
