DocumentCode
2928673
Title
Optimized 0.1 mu m GaAs MESFET´s
Author
Moore, K. ; East, J. ; Haddad, G. ; Brock, T.
Author_Institution
Michigan Univ., Ann Arbor, MI, USA
fYear
1992
fDate
1-5 June 1992
Firstpage
643
Abstract
The authors have optimized the design of conventional GaAs MESFETs for high-frequency operation. FETs were fabricated using electron beam lithography to define 0.1- mu m mushroom and T gates. The best results obtained included peak transconductance of 600 mS/mm, f/sub t/=93 GHz, and f/sub max/>or=150 GHz. In addition, studies were carried out to examine the effect of gate shape and location on high-frequency device performance.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; electron beam lithography; gallium arsenide; solid-state microwave devices; 0.1 micron; 150 GHz; 600 mS/mm; 93 GHz; MESFETs; T gates; electron beam lithography; gate location; gate shape; high-frequency device; mushroom gates; optimisation; peak transconductance; performance; semiconductors; Design optimization; Frequency; Gallium arsenide; Gold; Lifting equipment; Lithography; MESFETs; Ohmic contacts; Shape; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location
Albuquerque, NM, USA
ISSN
0149-645X
Print_ISBN
0-7803-0611-2
Type
conf
DOI
10.1109/MWSYM.1992.188065
Filename
188065
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