Title :
Optimized 0.1 mu m GaAs MESFET´s
Author :
Moore, K. ; East, J. ; Haddad, G. ; Brock, T.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Abstract :
The authors have optimized the design of conventional GaAs MESFETs for high-frequency operation. FETs were fabricated using electron beam lithography to define 0.1- mu m mushroom and T gates. The best results obtained included peak transconductance of 600 mS/mm, f/sub t/=93 GHz, and f/sub max/>or=150 GHz. In addition, studies were carried out to examine the effect of gate shape and location on high-frequency device performance.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron beam lithography; gallium arsenide; solid-state microwave devices; 0.1 micron; 150 GHz; 600 mS/mm; 93 GHz; MESFETs; T gates; electron beam lithography; gate location; gate shape; high-frequency device; mushroom gates; optimisation; peak transconductance; performance; semiconductors; Design optimization; Frequency; Gallium arsenide; Gold; Lifting equipment; Lithography; MESFETs; Ohmic contacts; Shape; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188065
