• DocumentCode
    2928679
  • Title

    Graphene nano-ribbon (GNR) interconnects: A genuine contender or a delusive dream?

  • Author

    Xu, Chuan ; Li, Hong ; Banerjee, Kaustav

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a comprehensive conductance and delay analysis of graphene nano-ribbon (GNR) interconnects. The conductance model of GNR is derived using a simple tight binding model and the linear response Landauer formula. Several GNR structures are examined, and the conductance among them and other interconnect materials (copper, tungsten and carbon nanotubes) is compared. Impact of different model parameters (mean free path, Fermi level and edge specularity) on the conductance is discussed. An RLC equivalent circuit model is defined to analyze both global and local GNR interconnect delays. The results reveal that till the very end of ITRS´07 roadmap, GNRs cannot match the performance of global level copper or SWCNTs, unless multiple layers along with proper intercalation doping is used and specular nano-ribbon edge is achieved. However, multi-layer zigzag edged GNRs (zz-GNRs) can be comparable to copper at the local level, and can have much better performance than that of tungsten, implying possible application as local interconnects.
  • Keywords
    RLC circuits; doping; electric admittance; equivalent circuits; graphene; integrated circuit interconnections; nanostructured materials; RLC equivalent circuit; comprehensive conductance; delay analysis; graphene nano-ribbon interconnects; intercalation doping; linear response Landauer formula; multi-layer zigzag edged GNR; Carbon nanotubes; Conducting materials; Copper; Delay; Equivalent circuits; Integrated circuit interconnections; LAN interconnection; Organic materials; Semiconductor process modeling; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796651
  • Filename
    4796651