DocumentCode
2928679
Title
Graphene nano-ribbon (GNR) interconnects: A genuine contender or a delusive dream?
Author
Xu, Chuan ; Li, Hong ; Banerjee, Kaustav
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
fYear
2008
fDate
15-17 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
This paper presents a comprehensive conductance and delay analysis of graphene nano-ribbon (GNR) interconnects. The conductance model of GNR is derived using a simple tight binding model and the linear response Landauer formula. Several GNR structures are examined, and the conductance among them and other interconnect materials (copper, tungsten and carbon nanotubes) is compared. Impact of different model parameters (mean free path, Fermi level and edge specularity) on the conductance is discussed. An RLC equivalent circuit model is defined to analyze both global and local GNR interconnect delays. The results reveal that till the very end of ITRS´07 roadmap, GNRs cannot match the performance of global level copper or SWCNTs, unless multiple layers along with proper intercalation doping is used and specular nano-ribbon edge is achieved. However, multi-layer zigzag edged GNRs (zz-GNRs) can be comparable to copper at the local level, and can have much better performance than that of tungsten, implying possible application as local interconnects.
Keywords
RLC circuits; doping; electric admittance; equivalent circuits; graphene; integrated circuit interconnections; nanostructured materials; RLC equivalent circuit; comprehensive conductance; delay analysis; graphene nano-ribbon interconnects; intercalation doping; linear response Landauer formula; multi-layer zigzag edged GNR; Carbon nanotubes; Conducting materials; Copper; Delay; Equivalent circuits; Integrated circuit interconnections; LAN interconnection; Organic materials; Semiconductor process modeling; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location
San Francisco, CA
ISSN
8164-2284
Print_ISBN
978-1-4244-2377-4
Electronic_ISBN
8164-2284
Type
conf
DOI
10.1109/IEDM.2008.4796651
Filename
4796651
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