Pseudomorphic inverted HEMT suitable to low supplied voltage application

Author

Kasashima, M. ; Arai, Y. ; Fujishiro, H.I. ; Nakamura, H. ; Nishi, S.

Author_Institution

Oki Electric Industry Co. Ltd., Tokyo, Japan

fYear

1992

fDate

1-5 June 1992

Firstpage

651

Abstract

The superiority of the pseudomorphic inverted high electron mobility transistor (HEMT) as a low-voltage operating device was revealed. To study the high-frequency properties of the FET, two types of frequency-variable measurement systems which represented active load and common-source circuits were employed. It was confirmed that the feature of low knee voltage in static I-V was preserved above 100 kHz, which predicts the microwave characteristics of the device. Estimated output power was 50% higher than that of the conventional pseudomorphic HEMT at a low supply voltage.<>

Keywords

high electron mobility transistors; solid-state microwave devices; 100 kHz; active load circuits; common-source circuits; frequency-variable measurement systems; high electron mobility transistor; high-frequency properties; low knee voltage; low supply voltage; low-voltage operating device; output power; pseudomorphic inverted HEMT; static I-V; Circuits; Frequency measurement; HEMTs; Knee; Low voltage; MODFETs; Microwave FETs; Microwave devices; PHEMTs; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188067

Filename

188067