A unified 7.5nm dash-type confined cell for high performance PRAM device

Author

Im, D.H. ; Lee, J.I. ; Cho, S.L. ; An, H.G. ; Kim, D.H. ; Kim, I.S. ; Park, H. ; Ahn, D.H. ; Horii, H. ; Park, S.O. ; Chung, U-in ; Moon, J.T.

Author_Institution

Process Dev. Team, Samsung Electron. Co. Ltd., Yongin

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We present a new-type confine structure within 7.5 nm width dash-contact for sub 20 nm generation PRAMs. Phase change material (PCM) by chemical vapor deposition (CVD) was perfectly filled in a 7.5 nm width dash-contact without void along with 30 nm depth. By adopting confined CVD-PCM, we were able to reduce the reset current below ~160 muA and to obtain high reliability. In addition, the programming time of dash-confined cell was much improved to 50 ns due to volume confinement of PCM cell. Consequently, we firstly demonstrate the high performance of the 7.5 nm width confined cell, which is the smallest size close to physical limit.

Keywords

circuit reliability; phase change materials; phase change memories; 7.5 nm dash-type confined cell; CVD; PCM cell; PRAM device; chemical vapor deposition; dash contact; phase change material; programming time; reliability; reset current; size 7.5 nm; volume confinement; Chemical vapor deposition; Electrodes; Etching; Lithography; Moon; Phase change materials; Phase change random access memory; Temperature; Thermal resistance; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796654

Filename

4796654