Title :
A VDMOS transistor model taking into account the thermoelectrical interactions
Author :
Lallement, C. ; Bouchakour, R. ; Maurel, T.
Author_Institution :
Dept. d´´Electron., Telecom Paris, France
fDate :
30 May-2 Jun 1994
Abstract :
One of the most important problems in the field of power electronics is heat dissipation. During the last ten years, different models of power MOSFET transistors (VDMOS transistors) have been developed but only a few of them take the temperature dynamically into account. A constant temperature for the model can distort the electrical behavior of the device. In this paper we propose an analytical one-dimensional thermoelectrical model for the VDMOS transistor, implemented in the SABER circuit simulator, in which the device´s temperature becomes an interactive variable during the simulation. This model is built on a combination of an electrical network with a thermal network. The accuracy of the model is appreciated with a complete characterization, and its capabilities are explored by a circuit example
Keywords :
MOS integrated circuits; circuit analysis computing; cooling; insulated gate field effect transistors; power transistors; semiconductor device models; SABER circuit simulator; VDMOS transistor model; electrical behavior; electrical network; heat dissipation; interactive variable; power electronics; thermal network; thermoelectrical interactions; Analytical models; Capacitance; Circuit simulation; Heat sinks; Impedance; MOSFETs; Packaging; Semiconductor device measurement; Temperature; Thermoelectricity;
Conference_Titel :
Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-1915-X
DOI :
10.1109/ISCAS.1994.408821
