DocumentCode
2928774
Title
Transient effects of delay, switching and recovery in phase change memory (PCM) devices
Author
Lavizzari, S. ; Ielmini, D. ; Sharma, D. ; Lacaita, A.L.
Author_Institution
Dipt. di Elettron. e Inf. & IU.NET, Politec. di Milano, Milan
fYear
2008
fDate
15-17 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
Threshold switching effects play a critical role in phase change memory (PCM) devices, since they contribute to the programming (set/reset) times and may lead to unwanted disturbs during the read operation. This work presents a detailed characterization and modeling of transient effects of delay, switching and recovery in PCM devices, allowing to quantitatively evaluate the statistical impact of read disturb and the ultimate speed limitations to set/reset and program/verify loops.
Keywords
delays; phase change memories; transient analysis; delay transient effects; phase change memory devices; recovery; threshold switching effects; Amorphous materials; Delay effects; Displays; Electric resistance; Electronic mail; Phase change materials; Phase change memory; Resistance heating; Tellurium; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location
San Francisco, CA
ISSN
8164-2284
Print_ISBN
978-1-4244-2377-4
Electronic_ISBN
8164-2284
Type
conf
DOI
10.1109/IEDM.2008.4796655
Filename
4796655
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