Title :
Transient effects of delay, switching and recovery in phase change memory (PCM) devices
Author :
Lavizzari, S. ; Ielmini, D. ; Sharma, D. ; Lacaita, A.L.
Author_Institution :
Dipt. di Elettron. e Inf. & IU.NET, Politec. di Milano, Milan
Abstract :
Threshold switching effects play a critical role in phase change memory (PCM) devices, since they contribute to the programming (set/reset) times and may lead to unwanted disturbs during the read operation. This work presents a detailed characterization and modeling of transient effects of delay, switching and recovery in PCM devices, allowing to quantitatively evaluate the statistical impact of read disturb and the ultimate speed limitations to set/reset and program/verify loops.
Keywords :
delays; phase change memories; transient analysis; delay transient effects; phase change memory devices; recovery; threshold switching effects; Amorphous materials; Delay effects; Displays; Electric resistance; Electronic mail; Phase change materials; Phase change memory; Resistance heating; Tellurium; Voltage;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796655
