DocumentCode :
2928786
Title :
Characterization and modelling of low-frequency noise in PCM devices
Author :
Fantini, P. ; Beneventi, G. Betti ; Calderoni, A. ; Larcher, L. ; Pavan, P. ; Pellizzer, F.
Author_Institution :
R&D - Technol. Dev., Numonyx, Agrate Brianza
fYear :
2008
fDate :
15-17 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
Low-frequency noise in PCM devices is experimentally investigated providing a new physical model for the amorphous GST (Ge2Sb2Te5) material. Noise intensity is characterized and modelled as a function of bias, temperature and size. Findings from 1/f noise analysis are used to understand the drift mechanism of the amorphous state resistance.
Keywords :
1/f noise; antimony compounds; germanium compounds; phase change memories; 1/f noise analysis; Ge2Sb2Te5; PCM device; amorphous GST material; drift mechanism; low-frequency noise; phase change memory; Low-frequency noise; Phase change materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
8164-2284
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
Type :
conf
DOI :
10.1109/IEDM.2008.4796656
Filename :
4796656
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2928786
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