Title :
GaAs monolithic components development for Q-band phased array application
Author :
Aust, M. ; Wang, H. ; Carandang, R. ; Tan, K. ; Chen, C.H. ; Trinh, T. ; Esfandiari, R. ; Yen, H.C.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
Major components for monolithic Q-band phased-array applications have been developed using 0.2 mu m doped channel pseudomorphic InGaAs/GaAs high electron mobility transistor (HEMT) technology. The components include a high-gain, high-efficiency monolithic amplifier and a 3-bit switched line, monolithic phase shifter. At 44 GHz, measurement results of the amplifier demonstrated a small signal gain of 19.5 dB, and a power added efficiency of 20% at 3-dB compression point with an output power of 9 mW. The phase shifter had a measured insertion loss of 7.5 dB and a phase error smaller than 7 degrees from 43 to 45 GHz for all phase states. These components are suitable for monolithic integrated phased-array transmitter applications.<>
Keywords :
III-V semiconductors; MMIC; antenna phased arrays; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; phase shifters; 0.2 micron; 19.5 dB; 20 percent; 3 bit; 43 to 45 GHz; 7.5 dB; 9 mW; InGaAs-GaAs; LNA; Q-band phased-array; compression point; high electron mobility transistor; insertion loss; monolithic amplifier; monolithic components; monolithic integrated phased-array transmitter; monolithic phase shifter; output power; phase error; power added efficiency; pseudomorphic HEMT; semiconductors; signal gain; switched line; Gain measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; Loss measurement; MODFETs; Phase shifters; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188081
