Comprehensive study on vth variability in silicon on Thin BOX (SOTB) CMOS with small random-dopant fluctuation: Finding a way to further reduce variation

Author

Sugii, Nobuyuki ; Tsuchiya, Ryuta ; Ishigaki, Takashi ; Morita, Yusuke ; Yoshimoto, Hiroyuki ; Torii, Kazuyoshi ; Kimura, Shin´ichiro

Author_Institution

Central Res. Lab., Hitachi, Ltd., Kokubunji

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

The Silicon on Thin BOX (SOTB) has the smallest V_th variation among planar CMOS due to low-dose channel. This study focused on identifying the remaining components after reducing random-dopant fluctuation (RDF) by decreasing impurities in the channel. Improving short-channel-effect immunity and body-thickness uniformity is the key to further reducing the variation. An often mentioned phenomenon, larger variability in NMOS than PMOS, cannot be explained by conventional RDF but is surely related to channel doping.

Keywords

CMOS integrated circuits; elemental semiconductors; semiconductor doping; silicon; Si; Silicon on Thin BOX CMOS; body-thickness uniformity; channel doping; low-dose channel; random-dopant fluctuation; short-channel-effect immunity; Doping profiles; FinFETs; Fluctuations; Impurities; Laboratories; Leakage current; MOS devices; Resource description framework; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796664

Filename

4796664