Improved effective switching current (IEFF+) and capacitance methodology for CMOS circuit performance prediction and model-to-hardware correlation

New effective drive current I_EFF ⁺ methodologies are demonstrated in this paper to address predictability of circuit performance across wide Vt range and accuracy of effective resistance R_EFF prediction-to-hardware correlation. Two separate I_EFF definitions are adopted for delay performance prediction (I_EFF = [I_H + I_L]/2), and ring AC/DC prediction-tohardware correlation analysis (I_EFF ⁺ = [1.15I_H + I_L + G_DS,LIN* VDD/80]/2). I_EFF ⁺ results in perfect matching in ring AC and DC effective resistance across SOI and bulk technologies. I_EFF combined with Vt-dependent effective switching capacitance (C_{EFF_Delay}) also leads to good match between predicted performance and spice simulation across wide Vt range using simple CMOS device parameters.