Title :
Temperature dependence of DC currents in HBT
Author :
Wang, H. ; Algani, C. ; Konczykowska, A. ; Zuberek, W.
Author_Institution :
CNET, Bagneux, France
Abstract :
A DC thermal-electrical heterojunction bipolar transistor (HBT) model is presented. Only three parameters were needed to simulate completely an HBT with the self-heating effect. It can be very easily implemented in any CAD software which uses the SPICE bipolar junction transistor model. Parameter extraction has been carried out on measured data and good fits were obtained over a wide temperature range. This model can be used to design high-power heterojunction bipolar transistors and circuits with analysis of their thermal effects.<>
Keywords :
SPICE; circuit CAD; heterojunction bipolar transistors; semiconductor device models; CAD software; DC currents; DC thermal-electrical model; HBT; SPICE; bipolar junction transistor model; heterojunction bipolar transistor; self-heating effect; thermal effects; Bipolar transistors; Design automation; Heterojunction bipolar transistors; Parameter extraction; Power system modeling; SPICE; Semiconductor process modeling; Silicon; Temperature dependence; Temperature distribution;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188089
