DocumentCode
2929098
Title
1.2: Sub-millimeter and THz power amplifier development at northrop grumman
Author
Tucek, Jack ; Basten, Mark ; Gallagher, David ; Kreischer, Kenneth
Author_Institution
Electron. Syst., Northrop Grumman Corp., Rolling Meadows, IL, USA
fYear
2010
fDate
18-20 May 2010
Firstpage
19
Lastpage
20
Abstract
Vacuum electronic (VE) power amplifiers are being developed between 100 GHz and 1 THz. Minimum power goals are 50 watts at 220 GHz, and 100 mW at 670 GHz. These devices will use advanced, high current density cathodes, a folded waveguide as the slow-wave circuit, and a depressed collector for overall device efficiency. Operation at duty cycles of 50-100% is anticipated.
Keywords
power amplifiers; submillimetre wave amplifiers; terahertz wave devices; waveguides; Northrop Grumman; folded waveguide; frequency 220 GHz; frequency 670 GHz; high current density cathode; power 100 mW; power 50 W; power amplifier; slow-wave circuit; vacuum electronic; Bonding; Cathodes; Copper; Coupling circuits; Electron beams; Etching; High power amplifiers; Power amplifiers; Radio frequency; Vacuum systems; Terahertz; imaging; ion etching; submillimeter wave; vacuum electronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference (IVEC), 2010 IEEE International
Conference_Location
Monterey, CA
Print_ISBN
978-1-4244-7098-3
Type
conf
DOI
10.1109/IVELEC.2010.5503623
Filename
5503623
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