Title :
A high-sensitivity broadband image sensor using CuInGaSe2 thin films
Author :
Matsushima, O. ; Miyazaki, K. ; Takaoka, M. ; Maekawa, T. ; Sekiguchi, H. ; Fuchikami, T. ; Moriwake, M. ; Takasu, H. ; Ishizuka, S. ; Sakurai, K. ; Yamada, A. ; Niki, S.
Author_Institution :
Composite Devices Dev. Team, Rohm Corp. Ltd., Kyoto
Abstract :
We have fabricated a novel CMOS image sensor using polycrystalline CuInGaSe2 (CIGS) thin films as an absorber layer, which outperforms conventional crystalline Si (c-Si) CMOS image sensors regarding higher external quantum efficiency(EQE) and wider spectral sensitive range. Development of this image sensor has been realized due to dark current suppression by the combination of microfabrication processes of LSI and solar cell fabrication technologies. The newly developed CIGS image sensors were capable to capture night scenes. Image sensors with 352 (H) times 288 (V) pixels (CIF), and 640 (H) times 480 (V) pixels (VGA) with each pixel size of 10 mum times 10 mum, have been fabricated.
Keywords :
CMOS image sensors; copper compounds; gallium compounds; indium compounds; semiconductor thin films; ternary semiconductors; thin film sensors; CMOS image sensor; CuInGaSe; absorber layer; conventional crystalline; high-sensitivity broadband image sensor; microfabrication processes; polycrystalline thin films; solar cell fabrication technologies; CMOS image sensors; Crystallization; Dark current; Fabrication; Image sensors; Large scale integration; Photovoltaic cells; Pixel; Semiconductor thin films; Thin film sensors;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796669
