A high-sensitivity broadband image sensor using CuInGaSe2 thin films

Author

Matsushima, O. ; Miyazaki, K. ; Takaoka, M. ; Maekawa, T. ; Sekiguchi, H. ; Fuchikami, T. ; Moriwake, M. ; Takasu, H. ; Ishizuka, S. ; Sakurai, K. ; Yamada, A. ; Niki, S.

Author_Institution

Composite Devices Dev. Team, Rohm Corp. Ltd., Kyoto

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We have fabricated a novel CMOS image sensor using polycrystalline CuInGaSe₂ (CIGS) thin films as an absorber layer, which outperforms conventional crystalline Si (c-Si) CMOS image sensors regarding higher external quantum efficiency(EQE) and wider spectral sensitive range. Development of this image sensor has been realized due to dark current suppression by the combination of microfabrication processes of LSI and solar cell fabrication technologies. The newly developed CIGS image sensors were capable to capture night scenes. Image sensors with 352 (H) times 288 (V) pixels (CIF), and 640 (H) times 480 (V) pixels (VGA) with each pixel size of 10 mum times 10 mum, have been fabricated.

Keywords

CMOS image sensors; copper compounds; gallium compounds; indium compounds; semiconductor thin films; ternary semiconductors; thin film sensors; CMOS image sensor; CuInGaSe; absorber layer; conventional crystalline; high-sensitivity broadband image sensor; microfabrication processes; polycrystalline thin films; solar cell fabrication technologies; CMOS image sensors; Crystallization; Dark current; Fabrication; Image sensors; Large scale integration; Photovoltaic cells; Pixel; Semiconductor thin films; Thin film sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796669

Filename

4796669