Title :
Dual-gate FET millimeter-wave frequency divider
Author :
Shan, Chen Ru ; Tai, Zhang Qing
Author_Institution :
Dept. of Electr. Eng., Nanjing Univ. of Sci. & Technol., China
Abstract :
The feasibility of using a dual-gate FET as the frequency divider in the Ka-band with wide bandwidth has been demonstrated. By appropriately biasing and matching the dual-gate FET, as wide as 10 GHz operating frequency range was obtained
Keywords :
III-V semiconductors; field effect transistor circuits; frequency dividers; gallium arsenide; millimetre wave frequency convertors; 10 GHz; EHF; FET MM-wave frequency divider; GaAs; Ka-band; dual-gate FET; millimeter-wave frequency divider; Bandwidth; Feeds; Frequency conversion; Gallium arsenide; Microwave FETs; Microwave frequencies; Millimeter wave technology; Transconductance; Tuned circuits; Varactors;
Conference_Titel :
Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3619-4
DOI :
10.1109/ICMWFT.1996.574850
