Title :
Advanced image sensor technology for pixel scaling down toward 1.0µm (Invited)
Author :
Ahn, JungChak ; Moon, Chang-Rok ; Bumsuk Kim ; Lee, Kyungho ; Kim, Tae-Chan ; Lim, Moosup ; Lee, Wook ; Park, Heemin ; Moon, Kyoungsik ; Yoo, Jaeryung ; Lee, YongJei ; Park, ByungJun ; Jung, Sangil ; Lee, Junetaeg ; Lee, Tae-Hun ; Lee, YunKi ; Jung, Jungh
Author_Institution :
Samsung Electron., Yongin
Abstract :
As pixel size of image sensors shrinks down rapidly, we are reaching technical barrier to get the required low light performance. In this paper, recent advanced technologies such as backside illumination, new color filter array, low F-number with extended depth of field technologies, etc. are introduced to overcome such a barrier. It is shown that the integration of these advanced sensor technologies can make pixel size shrink down toward 1.0 mum with the required performance.
Keywords :
CMOS image sensors; CMOS image sensors; backside illumination; color filter array; pixel size; sensor size; size 1 mum; Bismuth; CMOS image sensors; CMOS technology; Image sensors; Lighting; Moon; Optical crosstalk; Optical sensors; Pixel; Sensor phenomena and characterization;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796671
