Advanced image sensor technology for pixel scaling down toward 1.0µm (Invited)

Author

Ahn, JungChak ; Moon, Chang-Rok ; Bumsuk Kim ; Lee, Kyungho ; Kim, Tae-Chan ; Lim, Moosup ; Lee, Wook ; Park, Heemin ; Moon, Kyoungsik ; Yoo, Jaeryung ; Lee, YongJei ; Park, ByungJun ; Jung, Sangil ; Lee, Junetaeg ; Lee, Tae-Hun ; Lee, YunKi ; Jung, Jungh

Author_Institution

Samsung Electron., Yongin

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

As pixel size of image sensors shrinks down rapidly, we are reaching technical barrier to get the required low light performance. In this paper, recent advanced technologies such as backside illumination, new color filter array, low F-number with extended depth of field technologies, etc. are introduced to overcome such a barrier. It is shown that the integration of these advanced sensor technologies can make pixel size shrink down toward 1.0 mum with the required performance.

Keywords

CMOS image sensors; CMOS image sensors; backside illumination; color filter array; pixel size; sensor size; size 1 mum; Bismuth; CMOS image sensors; CMOS technology; Image sensors; Lighting; Moon; Optical crosstalk; Optical sensors; Pixel; Sensor phenomena and characterization;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796671

Filename

4796671