Title :
The predicted signal to noise performance of a photodiode-distributed amplifier optical detector
Author_Institution :
Brunel Univ., Uxbridge, UK
Abstract :
Calculates the signal to noise ratios obtained from an optical detector consisting of a p-i-n photodiode-grounded source MESFET amplifier and also from a p-i-n photodiode-distributed amplifier combination. Expressions are given for both and compared numerically showing that the distributed amplifier combination is superior by up to 10 dB for bandwidths up to 40 GHz. The calculation assumes that the optical power is the same for the purpose of comparison and that the optical level is such that shot noise can be neglected.<>
Keywords :
Schottky gate field effect transistors; optical receivers; p-i-n photodiodes; 40 GHz; optical level; p-i-n photodiode-grounded source MESFET amplifier; photodiode-distributed amplifier optical detector; shot noise; signal to noise performance; Bandwidth; Distributed amplifiers; MESFETs; Optical amplifiers; Optical detectors; Optical noise; PIN photodiodes; Semiconductor optical amplifiers; Signal to noise ratio; Stimulated emission;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188099
