Title :
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction
Author :
Cagli, C. ; Ielmini, D. ; Nardi, F. ; Lacaita, A.L.
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Milan
Abstract :
This work addresses the set and reset mechanisms in NiO-based resistive-switching memory (RRAM) devices, presenting a new physics-based model for RRAM reliability and programming. We show experimental evidence that the set process is initiated by threshold switching, that is a reversible electronic transition to a high conductance state. We develop set/reset models for prediction of programming voltage and time under sweep or pulsed conditions. The speed limitations of RRAMs are then assessed by a detailed study of reset operation in the pulsed regime, showing evidence for over-reset under high-voltage, fast programming conditions (< 1 mus).
Keywords :
integrated circuit reliability; nickel compounds; random-access storage; switching circuits; NiO; NiO-based RRAM; disturb prediction; reliability; resistive-switching memory devices; retention prediction; threshold switching; Dielectrics; Electrical resistance measurement; Electrodes; Fabrication; Flash memory; Predictive models; Pulse measurements; Scalability; Thermal resistance; Voltage;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796678