High power, coherent InGaAsP/InP semiconductor laser design operating at 1.55 microns

Author

Jha, A.R.

Author_Institution

Jha Tech. Consulting Services, Cerritos, CA, USA

fYear

1996

fDate

12-15 Aug 1996

Firstpage

255

Lastpage

258

Abstract

Diode-pumped solid state (DPSS) lasers employing diode arrays and optical crystals suffer from excessive weight, low conversion efficiency and high fabrication cost. This paper reveals a unique design of coherent, high performance InGaAsP/InP strained-layer quantum-well (QW) semiconductor laser capable of delivering CW power output greater than 500 mw at 1.55 microns. It is important to mention that InGaAsP/InP strained-layer double-quantum-well (DQW) laser diodes are capable of yielding even higher optical power output with improved differential quantum efficiency (DQE) and with lower threshold current at 20 deg C. Compact packaging, minimum power consumption, eye-safe operation and minimum cost are the major benefits of this laser design

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical pumping; quantum well lasers; semiconductor device packaging; 1.55 micrometre; 20 degC; CW power output; InGaAsP-InP; conversion efficiency; differential quantum efficiency; diode-pumped solid state lasers; double-quantum-well lasers; eye-safe operation; fabrication cost; packaging; power consumption; semiconductor laser design; strained-layer quantum-well lasers; threshold current; Costs; Indium phosphide; Optical arrays; Optical design; Power lasers; Semiconductor diodes; Semiconductor laser arrays; Semiconductor lasers; Solid lasers; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3619-4

Type

conf

DOI

10.1109/ICMWFT.1996.574851

Filename

574851