Title :
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
Author :
Beach, R. ; Min, T. ; Horng, C. ; Chen, Q. ; Sherman, P. ; Le, S. ; Young, S. ; Yang, K. ; Yu, H. ; Lu, X. ; Kula, W. ; Zhong, T. ; Xiao, R. ; Zhong, A. ; Liu, G. ; Kan, J. ; Yuan, J. ; Chen, J. ; Tong, R. ; Chien, J. ; Torng, T. ; Tang, D. ; Wang, P. ; C
Author_Institution :
MagIC-IBM MRAM Alliance, MagIC Technol., Inc., Milpitas, CA
Abstract :
We have demonstrated a robust magnetic tunnel junction (MTJ) with a resistance-area product RA=8 Omega-mum2 that simultaneously satisfies the statistical requirements of high tunneling magnetoresistance TMR > 15sigma(Rp), write threshold spread sigma(Vw)/<Vw> <7.1%, breakdown-to-write voltage margin over 0.5 V, read-induced disturbance rate below 10-9, and sufficient write endurance, and is free of unwanted write-induced magnetic reversal. The statistics suggest that a 64 Mb chip at the 90-nm node is feasible.
Keywords :
MRAM devices; tunnelling magnetoresistance; breakdown-to-write voltage margin; high-density spin torque transfer-MRAM; magnetic tunnel junction; read-induced disturbance; resistance-area product; storage capacity 64 Mbit; tunneling magnetoresistance; write-induced magnetic reversal; Breakdown voltage; CMOS technology; Energy barrier; FETs; Magnetic tunneling; Signal design; Testing; Threshold voltage; Torque; Tunneling magnetoresistance;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796679
