A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

Author

Beach, R. ; Min, T. ; Horng, C. ; Chen, Q. ; Sherman, P. ; Le, S. ; Young, S. ; Yang, K. ; Yu, H. ; Lu, X. ; Kula, W. ; Zhong, T. ; Xiao, R. ; Zhong, A. ; Liu, G. ; Kan, J. ; Yuan, J. ; Chen, J. ; Tong, R. ; Chien, J. ; Torng, T. ; Tang, D. ; Wang, P. ; C

Author_Institution

MagIC-IBM MRAM Alliance, MagIC Technol., Inc., Milpitas, CA

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We have demonstrated a robust magnetic tunnel junction (MTJ) with a resistance-area product RA=8 Omega-mum² that simultaneously satisfies the statistical requirements of high tunneling magnetoresistance TMR > 15sigma(R_p), write threshold spread sigma(Vw)/<Vw> <7.1%, breakdown-to-write voltage margin over 0.5 V, read-induced disturbance rate below 10^-9, and sufficient write endurance, and is free of unwanted write-induced magnetic reversal. The statistics suggest that a 64 Mb chip at the 90-nm node is feasible.

Keywords

MRAM devices; tunnelling magnetoresistance; breakdown-to-write voltage margin; high-density spin torque transfer-MRAM; magnetic tunnel junction; read-induced disturbance; resistance-area product; storage capacity 64 Mbit; tunneling magnetoresistance; write-induced magnetic reversal; Breakdown voltage; CMOS technology; Energy barrier; FETs; Magnetic tunneling; Signal design; Testing; Threshold voltage; Torque; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796679

Filename

4796679